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| NEW PRODUCT NEW PRODUCT NEW PRODUCT MPSA56 Small Signal Transistors (PNP) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MPSA06 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBTA56. max. 0.022 (0.55) 0.098 (2.5) E C B MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25 C at TC = 25 C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range 1)Valid -VCBO -VCEO -VEBO -IC Ptot 80 80 4.0 500 625 1.5 V V V mA mW W K/W C C RJA Tj TS 200(1) 150 - 55 to +150 provided that leads are kept at ambient temperature 10/27/98 MPSA56 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. .MAX. UNIT Collector-Emitter Breakdown Voltage at -IC = 1 mA, IB = 0 mA Emitter-Base Breakdown Voltage at IE = 100 mA, IC = 0 Collector-Emitter Cutoff Current -VCE = 60 V, -IB = 0 Collector-Base Cutoff Current -VCB = 80 V, IE = 0 Collector Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base-Emitter On Voltage at -IC = 100 mA, -IB = 10 mA at -IC = 50 mA, -IB = 5 mA DC Current Gain at VCE = 1 V, -IC = 10 mA at VCE = 1 V, -IC = 100 mA Gain-Bandwidth Product at VCE = 1 V, IC = 100 mA, f = 100 MHz 1) -VBR(CEO) -V(BR)EBO -ICES -ICBO -VCEsat 80 4.0 - - - - - 100 100 0.25 V V nA nA V -VBE(on) hFE hFE fT - 100 100 50 1.2 - - - V - - MHz Valid provided that electrodes are kept at ambient temperature |
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